AP9998GH-HF Advanced Power Electronics Corp., AP9998GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP9998GH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9998GH-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Qg (nc): 30
• Qgs (nc): 7
• Qgd (nc): 13
• Id(a): 44
• Pd(w): 104
• Configuration: Single N
• Package: TO-252

AP9998GH-HF
1000
100
100
0.1
80
60
40
20
10
12
10
0
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Single Pulse
V
T
Operation in this
area limited by
DS
I
V
C
R
D
=25
DS(ON)
DS
=5V
= 24 A
=80V
o
2
V
V
C
DS
GS
10
T
Q
1
j
G
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
=150
, Total Gate Charge (nC)
4
o
C
T
10
20
j
=25
T
6
j
= -40
o
C
o
100
C
30
100ms
100us
10ms
1ms
8
DC
10
1000
40
Fig 10. Effective Transient Thermal Impedance
2000
1600
1200
800
400
0.01
0.1
0
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
10V
0.05
0.01
0.2
0.02
V
0.1
Duty factor=0.5
G
Single Pulse
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
0.01
17
P
DM
Duty factor = t/T
Peak T
0.1
21
j
= P
t
DM
T
x R
f=1.0MHz
1
thjc
25
+ T
C
Q
C
C
C
oss
rss
iss
10
29
4