AP85T10GP-HF Advanced Power Electronics Corp., AP85T10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP85T10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85T10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 8
• Qg (nc): 100
• Qgs (nc): 24
• Qgd (nc): 45
• Id(a): 125
• Pd(w): 300
• Configuration: Single N
• Package: TO-220

300
250
200
150
100
1.2
1.1
0.9
0.8
50
40
30
20
10
0
1
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
0.2
V
4
Temperature
DS
V
0
T
T
SD
T
, Drain-to-Source Voltage (V)
C
j
Reverse Diode
=175
0.4
= 25
j
, Source-to-Drain Voltage (V)
, Junction Temperature (
8
o
o
C
C
50
0.6
12
0.8
DSS
100
T
16
j
=25
v.s. Junction
1
o
V
C
o
G
20
150
C)
= 6.0V
1.2
9.0V
8.0V
7.0V
10V
24
1.4
200
160
120
2.4
2.0
1.6
1.2
0.8
0.4
80
40
Fig 2. Typical Output Characteristics
1.4
1.2
0.8
0.6
0.4
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
1
-50
-50
0
T
V
C
I
D
= 1 75
G
=40A
=10V
Junction Temperature
v.s. Junction Temperature
V
2
0
o
0
DS
C
T
T
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
,Junction Temperature (
4
50
50
AP85T10GP-HF
100
6
100
V
o
o
G
8
150
150
C)
C)
= 6.0V
8.0V
7.0V
9.0V
10V
10
200
200
3