AP85T08GS Advanced Power Electronics Corp., AP85T08GS Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP85T08GS

Manufacturer Part Number
AP85T08GS
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP85T08GS

Vds
80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13
Qg (nc)
63
Qgs (nc)
23
Qgd (nc)
38
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-263
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting T
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP85T08GS/P
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
j
=25
o
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
C , V
DD
=30V , L=1mH , R
Parameter
Parameter
2
2
2
2
G
j
j
j
=25Ω , I
=25
=150
=25
o
C)
o
C)
o
C(unless otherwise specified)
2
AS
=30A.
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=45A
=45A
G
D
=45A, V
=20A, V
=0.89Ω
=10Ω,V
=0V, I
=10V, I
=V
=10V, I
=80V, V
=64V ,V
= ±20V
=64V
=4.5V
=40V
=0V
=25V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=1mA
D
D
GS
=250uA
GS
GS
=45A
=0V
=0V
=45A
=10V
=0V
=0V
Min.
Min.
80
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6300
Typ.
Typ.
100
144
173
670
350
1.1
70
63
23
38
30
47
86
-
-
-
-
-
-
-
10080
±100
Max.
Max.
100
100
1.7
1.3
13
10
3
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
V
S
V
2/4

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