AP75T10GP-HF Advanced Power Electronics Corp., AP75T10GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP75T10GP-HF

Manufacturer Part Number
AP75T10GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP75T10GP-HF

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
15
Rds(on) / Max(m?) Vgs@4.5v
21
Qg (nc)
69
Qgs (nc)
12
Qgd (nc)
39
Id(a)
65
Pd(w)
138
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
100
+20
260
138
S
65
41
DS(ON)
AP75T10GP-HF
DSS
Value
0.9
62
TO-220(P)
15mΩ
200807113
100V
Units
W/℃
Units
℃/W
℃/W
65A
W
V
V
A
A
A
1

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AP75T10GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP75T10GP-HF Halogen-Free Product BV 100V DSS R 15mΩ DS(ON) I 65A D G TO-220( Rating Units ...

Page 2

... AP75T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =10V C G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 =25 C 0.5 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP75T10GP-HF 10V o C 6.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP75T10GP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 75T10GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence If last "S" is numerical letter : Rohs product If last " ...

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