AP60T10GP Advanced Power Electronics Corp., AP60T10GP Datasheet - Page 3

• Manufacturer Part Number: AP60T10GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60T10GP

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 23
• Qg (nc): 55
• Qgs (nc): 15
• Qgd (nc): 24
• Id(a): 57
• Pd(w): 167
• Configuration: Single N
• Package: TO-220

200
160
120
30
20
10
80
40
1.2
1.1
0.9
0.8
0
0
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
= 25
0.2
V
Temperature
T
o
T
V
2
DS
Reverse Diode
C
j
j
=150
SD
, Junction Temperature (
0
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
o
C
4
0.6
50
0.8
DSS
6
T
v.s. Junction
1
j
=25
100
o
C)
8
V
o
C
G
1.2
= 6 .0V
8.0V
9.0V
7.0V
10 V
1.4
10
150
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
100
80
60
40
20
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
0
V
T
I
D
C
G
= 28A
= 150
= 10V
v.s. Junction Temperature
Junction Temperature
V
2
DS
o
T
T
C
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
4
50
50
AP60T10GS/P
6
100
100
V
o
o
G
C)
8
C)
= 6.0 V
7.0V
9.0V
8.0V
10V
150
10
150
3