AP15P10GP Advanced Power Electronics Corp., AP15P10GP Datasheet

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP15P10GP

Manufacturer Part Number
AP15P10GP
Description
Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP15P10GP.pdf (4 pages)

Specifications of AP15P10GP

Vds
-100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
230
Qg (nc)
37
Qgs (nc)
5
Qgd (nc)
15
Id(a)
-15
Pd(w)
96
Configuration
Single P
Package
TO-220
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15P10GP)
are available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
3
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
-100
0.77
S
+20
-9.4
-15
-60
96
DS(ON)
G D
DSS
AP15P10GS/P
Value
1.3
40
62
S
TO-263(S)
TO-220(P)
230mΩ
200910083
-100V
-15A
Units
W/℃
Units
℃/W
℃/W
℃/W
W
℃
℃
V
V
A
A
A
1

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AP15P10GP Summary of contents

Page 1

... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15P10GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP15P10GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 550 =25 C 450 350 250 150 2 4 ...

Page 4

AP15P10GS - -80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON) ...

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