AP9579GM-HF Advanced Power Electronics Corp., AP9579GM-HF Datasheet

AP9579GM-HF

Manufacturer Part Number
AP9579GM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9579GM-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
40
Qgs (nc)
8
Qgd (nc)
18
Id(a)
-7.3
Pd(w)
2.5
Configuration
Single P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9579GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
, V
, V
GS
GS
D
@ 10V
@ 10V
D
SO-8
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
3
S
S
G
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
+20
-7.3
-5.8
-60
-30
2.5
DS(ON)
DSS
AP9579GM-HF
Value
50
D
S
25mΩ
201110261
-7.3A
-60V
Units
℃/W
Unit
W
V
V
A
A
A
1

Related parts for AP9579GM-HF

AP9579GM-HF Summary of contents

Page 1

... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter 10V 10V GS 1 Parameter 3 AP9579GM-HF Halogen-Free Product BV -60V DSS R 25mΩ DS(ON) I -7. Rating -60 +20 -7.3 -5.8 -30 2.5 -55 to 150 ...

Page 2

... AP9579GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... -10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature -250uA D 1.6 1 0.8 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9579GM Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP9579GM- - -30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - ...

Related keywords