AP4591GM-HF Advanced Power Electronics Corp., AP4591GM-HF Datasheet

AP4591GM-HF

Manufacturer Part Number
AP4591GM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP4591GM-HF.pdf (4 pages)

Specifications of AP4591GM-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
96
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
29.5
Qgs (nc)
3
Qgd (nc)
7
Id(a)
-3.4
Pd(w)
2
Configuration
Dual P
Package
SO-8
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D1
D1
SO-8
D2
D2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S1
3
G1
S2
G1
Halogen-Free Product
G2
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
-3.4
-2.7
+20
-60
-20
DS(ON)
2
DSS
AP4951GM-HF
Value
62.5
D1
S1
G2
201108034
96mΩ
-3.4A
-60V
Units
W/℃
℃/W
Unit
W
℃
℃
V
V
A
A
A
D2
S2
1

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AP4591GM-HF Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ...

Page 2

AP4951GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 I = -2.7A D ℃ ...

Page 4

AP4951GM- - -48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 ...

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