AP9575GI-HF Advanced Power Electronics Corp., AP9575GI-HF Datasheet

AP9575GI-HF

Manufacturer Part Number
AP9575GI-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9575GI-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
70
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
14
Qgs (nc)
3
Qgd (nc)
8
Id(a)
-16
Pd(w)
31.3
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
D
@ 10V
@ 10V
S
TO-220CFM(I)
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
31.3
0.25
+20
-60
-16
-10
-60
DS(ON)
DSS
Value
4.0
AP9575GI-HF
65
D
S
70mΩ
200902093
-60V
-16A
Units
W/℃
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP9575GI-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G D TO-220CFM(I) S Parameter @ 10V GS @ 10V GS 1 Parameter AP9575GI-HF Halogen-Free Product BV -60V DSS R 70mΩ DS(ON) I -16A Rating Units -60 V ...

Page 2

... AP9575GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575GI-HF -10V o C -7.0V. -5.0V -4. -3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9575GI- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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