AP9972GI-HF Advanced Power Electronics Corp., AP9972GI-HF Datasheet

AP9972GI-HF

Manufacturer Part Number
AP9972GI-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9972GI-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
3.5
Qgs (nc)
9.5
Qgd (nc)
20
Id(a)
35
Pd(w)
31.3
Configuration
Single N
Package
TO-220CFM
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G D
-55 to 150
-55 to 150
Rating
S
BV
R
I
D
31.3
0.25
+25
120
60
35
22
DS(ON)
DSS
Value
AP9972GI-HF
65
4
TO-220CFM(I)
201011032
18mΩ
Units
W/℃
Units
℃/W
℃/W
60V
35A
W
V
V
A
A
A
1

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AP9972GI-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9972GI-HF Halogen-Free Product BV 60V DSS R 18mΩ DS(ON) I 35A TO-220CFM(I) Rating Units 60 ...

Page 2

... AP9972GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.6 I =23A D V =10V G 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance 1 0.7 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9972GI-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9972GI- =38V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 100 V =5V ...

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