AP4563GH-HF Advanced Power Electronics Corp., AP4563GH-HF Datasheet

AP4563GH-HF

Manufacturer Part Number
AP4563GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4563GH-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
30
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
13
Qgs (nc)
3
Qgd (nc)
8
Id(a)
30
Pd(w)
3.13
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
I
P
T
T
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
C
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
S1
G1
3
3
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
3
N-channel
3
N-CH
P-CH
+20
40
30
8.0
6.3
40
G1
Halogen-Free Product
Rating
-55 to 150
-55 to 150
3.13
0.025
D1
BV
R
I
BV
R
I
D
D
P-channel
DS(ON)
DS(ON)
S1
DSS
DSS
AP4563GH-HF
Value
-7.3
-5.9
3.2
+20
-40
-27
-40
40
3
G2
30mΩ
36mΩ
201110243
-7.3A
-40V
Units
W/℃
Units
℃/W
℃/W
℃/W
40V
8A
D2
W
S2
V
V
A
A
A
A
1

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AP4563GH-HF Summary of contents

Page 1

... Rthj-c (P-CH) Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter AP4563GH-HF Halogen-Free Product N-CH BV DSS R DS(ON P-CH BV DSS R DS(ON Rating ...

Page 2

... AP4563GH-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS /ΔT Breakdown Voltage Temperature Coefficient ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-32V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-2.4A =-7A dI/dt=-100A/µs AP4563GH-HF Min. Typ. -40 - =-1mA - -0. =-250uA - ...

Page 4

... AP4563GH-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... DC 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP4563GH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak Rthja=75℃ ...

Page 6

... AP4563GH-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 Duty factor=0.5 100us 1ms 0.1 0.1 10ms 100ms 0.05 1s 0.02 0.01 DC 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance V -4. d(off) f Fig 12. Gate Charge Waveform AP4563GH-HF f=1.0MHz Drain-to-Source Voltage ( Duty factor = t/T Peak thja Rthja=75℃ ...

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