AP9575AGS-HF Advanced Power Electronics Corp., AP9575AGS-HF Datasheet

AP9575AGS-HF

Manufacturer Part Number
AP9575AGS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9575AGS-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
64
Qg (nc)
35
Qgs (nc)
5
Qgd (nc)
12
Id(a)
-17
Pd(w)
36
Configuration
Single P
Package
TO-263
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
-60
-17
-11
-60
G D
36
DS(ON)
AP9575AGS-HF
DSS
Value
3.5
40
S
TO-263(S)
64mΩ
201105171
-60V
-17A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP9575AGS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9575AGS-HF Halogen-Free Product BV -60V DSS R 64mΩ DS(ON) I -17A TO-263(S) S Rating Units ...

Page 2

... AP9575AGS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =-10V 1.8 G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 3.0 2 2.0 1.5 1.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575AGS-HF -10V o C -7.0V -5.0V -4. . Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP9575AGS- -12A -48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area -5V ...

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