AP9560GS-HF Advanced Power Electronics Corp., AP9560GS-HF Datasheet

AP9560GS-HF

Manufacturer Part Number
AP9560GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9560GS-HF

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12.5
Rds(on) / Max(m?) Vgs@4.5v
16
Qg (nc)
42
Qgs (nc)
6
Qgd (nc)
24
Id(a)
-51
Pd(w)
54.3
Configuration
Single P
Package
TO-263
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
D
D
DM
DS
GS
D
D
STG
J
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
-200
54.3
3.13
+20
-40
-51
-32
DS(ON)
G D
DSS
AP9560GS-HF
Value
2.3
40
S
TO-263(S)
12.5mΩ
201108231
-40V
-51A
Units
Units
℃/W
℃/W
W
W
V
V
A
A
A
1

Related parts for AP9560GS-HF

AP9560GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9560GS-HF Halogen-Free Product BV -40V DSS R 12.5mΩ DS(ON) I -51A TO-263(S) Rating Units ...

Page 2

... AP9560GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -30A D 1 -10V G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 -50 Fig 4. Normalized On-Resistance 1.6 1.4 1 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9560GS-HF -10V o C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) ...

Page 4

... AP9560GS- =-32V DS I =-30A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area 100 limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords