AP9990GH-HF Advanced Power Electronics Corp., AP9990GH-HF Datasheet

AP9990GH-HF

Manufacturer Part Number
AP9990GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9990GH-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Qg (nc)
59
Qgs (nc)
14
Qgd (nc)
30
Id(a)
100
Pd(w)
125
Configuration
N-Channel
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9990GH-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
@T
C
c
c
Symbol
Symbol
=25℃
=100℃
c
A
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 175
-55 to 175
Rating
BV
R
I
D
+20
100
300
125
2.4
60
75
70
DS(ON)
DSS
G
AP9990GH-HF
Value
62.5
D
1.2
S
TO-252(H)
201102101
6mΩ
100A
Units
Units
℃/W
℃/W
60V
W
W
V
V
A
A
A
A
1

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AP9990GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP9990GH-HF Halogen-Free Product BV 60V DSS R 6mΩ DS(ON) I 100A TO-252(H) Rating Units ...

Page 2

... AP9990GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I =40A D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 0 150 200 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 0 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9990GH- =175 C 10V C 9.0V 8.0V 7.0V V =6.0V G 4.0 8.0 12.0 16.0 , Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 Junction Temperature ( ...

Page 4

... AP9990GH- =40A =30V DS V =36V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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