AP9575AGM-HF Advanced Power Electronics Corp., AP9575AGM-HF Datasheet
AP9575AGM-HF
Specifications of AP9575AGM-HF
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AP9575AGM-HF Summary of contents
Page 1
... Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter 10V 10V GS 1 Parameter 3 AP9575AGM-HF Halogen-Free Product BV -60V DSS R 64mΩ DS(ON) I -4. Rating Units -60 +20 -4.6 -3.6 -20 2.5 -55 to 150 ...
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... AP9575AGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2 =-10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 2.6 2 1.8 1.4 1 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575AGM-HF -10V o C -7.0V -5.0V -4. 4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
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... AP9575AGM- - -30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...