AP9974GJ-HF Advanced Power Electronics Corp., AP9974GJ-HF Datasheet - Page 4

• Manufacturer Part Number: AP9974GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9974GJ-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10.5
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 43
• Qgs (nc): 8
• Qgd (nc): 31
• Id(a): 74
• Pd(w): 104
• Configuration: Single N
• Package: TO-251

AP9974GH/J-HF
1000
100
100
0.1
14
12
10
10
80
60
40
20
8
6
4
2
0
1
0
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
I
Operation in this area
V
limited by R
D
= 30 A
DS
Single Pulse
=5V
T
DS(ON)
V
C
20
=25
DS
Q
V
V
2
G
, Drain-to-Source Voltage (V)
DS
T
GS
o
V
, Total Gate Charge (nC)
C
j
= 30 V
DS
1
=25
, Gate-to-Source Voltage (V)
V
= 38 V
DS
40
o
= 48 V
C
4
T
j
60
=150
10
o
C
6
80
100ms
100us
10ms
1ms
DC
100
100
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
4.5V
V
G
5
0.02
0.05
Duty factor=0.5
0.01
0.0001
0.1
0.2
Single Pulse
V
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
Q
C
C
C
C
rr
rss
oss
iss
1
29
4