AP9973GM Advanced Power Electronics Corp., AP9973GM Datasheet
AP9973GM
Specifications of AP9973GM
Available stocks
Related parts for AP9973GM
AP9973GM Summary of contents
Page 1
... Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter 10V 10V GS 1,2 Parameter 3 AP9973GM Pb Free Plating Product BV 60V DSS R 80mΩ DS(ON Rating Units 60 ±20 3.9 2 0.016 W/℃ ...
Page 2
... AP9973GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... I =3.9A D =3. =10V o G =25 C 2.0 A 1.5 1.0 0.5 0.0 11 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973GM 10V 6. 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ,Junction Temperature ( ...
Page 4
... AP9973GM 14 I =3. =30V =38V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...