AP9966GM-HF Advanced Power Electronics Corp., AP9966GM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness

AP9966GM-HF

Manufacturer Part Number
AP9966GM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9966GM-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
16.8
Rds(on) / Max(m?) Vgs@4.5v
24
Qg (nc)
8.5
Qgs (nc)
1.8
Qgd (nc)
5
Id(a)
8.3
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9966GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D1
D1
SO-8
D2
D2
S1
G1
S2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
3
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
8.3
6.6
40
30
DS(ON)
2
DSS
AP9966GM-HF
Value
S1
D1
62.5
G2
16.8mΩ
200907031
8.3A
Units
℃/W
40V
Unit
W
V
V
A
A
A
D2
S2
1

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AP9966GM-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP9966GM-HF Halogen-Free Product BV 40V DSS R 16.8mΩ DS(ON Rating Units 40 +20 8.3 6 -55 to 150 ℃ ...

Page 2

... AP9966GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1.2 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9966GM-HF o 10V T = 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o T ...

Page 4

... AP9966GM- 20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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