AP9965GEM Advanced Power Electronics Corp., AP9965GEM Datasheet
AP9965GEM
Specifications of AP9965GEM
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AP9965GEM Summary of contents
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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP9965GEM Pb Free Plating Product BV 40V DSS R 28mΩ DS(ON Rating Units 40 ±16 6.7 5 0.016 W/℃ ...
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... AP9965GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.3 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 50.0 40 30.0 20.0 10.0 1 1.2 0 Fig 6. On-Resistance vs. Drain Current AP9965GEM 10V 150 C A 7.0 V 5 Drain-to-Source Voltage ( 100 125 150 o , Junction Temperature ( ...
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... AP9965GEM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...