AP9962AGM-HF Advanced Power Electronics Corp., AP9962AGM-HF Datasheet

AP9962AGM-HF

Manufacturer Part Number
AP9962AGM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9962AGM-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
12
Qgs (nc)
2.5
Qgd (nc)
7.4
Id(a)
7
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9962AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
The SO-8 package is widely preferred for commercial-
industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
SO-8
3
3
D1
, V
, V
D1
GS
GS
D2
@ 10V
@ 10V
D2
S1
G1
S2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
3
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
AP9962AGM-HF
+20
5.5
40
20
DS(ON)
7
2
DSS
Value
62.5
D1
S1
G2
200901203
25mΩ
Units
W/℃
℃/W
40V
Unit
7A
W
V
V
A
A
A
D2
S2
1

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AP9962AGM-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter 10V 10V GS 1 Parameter 3 AP9962AGM-HF Halogen-Free Product BV 40V DSS R 25mΩ DS(ON Rating Units 5.5 A ...

Page 2

... AP9962AGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... =10V 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 2 1.6 1.2 0.8 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962AGM- =150 C 10V A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o Junction Temperature ( ...

Page 4

... AP9962AGM- = =20V =24V DS V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 40 V =5V T =25 DS ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9962AGM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...

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