AP9960GD Advanced Power Electronics Corp., AP9960GD Datasheet - Page 2

• Manufacturer Part Number: AP9960GD
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9960GD

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 14.7
• Qgs (nc): 7.1
• Qgd (nc): 6.8
• Id(a): 7
• Pd(w): 2
• Configuration: Dual N
• Package: PDIP-8

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP9960GD
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Continuous Source Current ( Body Diode )
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
2
copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
I
D
D
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
G
D
=2.3A, V
=7A
=1A
=V
=20Ω
=3.3Ω,V
=V
=10V, I
=40V, V
=32V ,V
=20V
=20V
=25V
=0V, I
=10V, I
=4.5V, I
= ± 20V
=4.5V
=0V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
GS
D
=250uA
D
D
D
=250uA
GS
GS
GS
=7A
=7A
=5A
=0V
=10V
=0V
=0V
S
=1.3V
D
=1mA
Min.
Min.
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.032
1725
Typ.
14.7
11.5
28.2
12.6
Typ.
235
145
7.1
6.8
6.3
25
-
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
1.54
1.3
25
40
25
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V