AP9934GM Advanced Power Electronics Corp., AP9934GM Datasheet

AP9934GM

Manufacturer Part Number
AP9934GM
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9934GM

Vds
-35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
72
Rds(on) / Max(m?) Vgs@4.5v
100
Qg (nc)
6
Qgs (nc)
1
Qgd (nc)
3
Id(a)
-3.6
Pd(w)
1.38
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9934GM
Manufacturer:
APM
Quantity:
20 000
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Full Bridge Application on
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
LCD Monitor Inverter
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
P1G
Parameter
1
P1S/P2S
N2D/P2D
SO-8
3
3
P2G
N1G
3
N1D/P1D
N1S/N2S
N2G
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
± 20
35
4.3
3.4
20
Pb Free Plating Product
N1G
P1G
-55 to 150
-55 to 150
Rating
1.38
0.01
P1N1D
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
N1S
DSS
DSS
P1S
Value
± 20
-3.6
-2.8
-35
-20
90
AP9934GM
N2S
P2S
P2N2D
48mΩ
72mΩ
-3.6A
-35V
Units
W/℃
℃/W
N2G
35V
4.3A
Unit
200920041
P2G
W
V
V
A
A
A

Related parts for AP9934GM

AP9934GM Summary of contents

Page 1

... Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D SO-8 N1G N-channel Parameter 3 AP9934GM Pb Free Plating Product N-CH BV 35V DSS R 48mΩ DS(ON) I 4.3A D P-CH BV -35V DSS R 72mΩ DS(ON) I -3.6A D ...

Page 2

... AP9934GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-28V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.2A =-3A dI/dt=-100A/µs AP9934GM Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

Page 4

... AP9934GM N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP9934GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. 0.01 T Single Pulse Duty factor = t/T ...

Page 6

... AP9934GM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP9934GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. 0.01 T Single Pulse Duty factor = t/T ...

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