AP9770GT-HF Advanced Power Electronics Corp., AP9770GT-HF Datasheet

AP9770GT-HF

Manufacturer Part Number
AP9770GT-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9770GT-HF

Vds
-60v
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
500
Rds(on) / Max(m?) Vgs@4.5v
800
Qg (nc)
6.8
Qgs (nc)
1.6
Qgd (nc)
3.2
Id(a)
-1.5
Pd(w)
0.83
Configuration
Single P
Package
TO-92
▼ Simple Drive Requirement
▼ Through Hole Type
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The TO-92 package is widely used for all commercial-industrial
applications.
V
V
I
I
I
P
P
T
T
Rthj-l
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
D
STG
J
@T
@T
@T
@T
L
L
Symbol
Symbol
=25℃
=100℃
L
A
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-lead
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
S
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
2.08
0.83
-1.5
-1.2
+20
-60
DS(ON)
-6
D
DSS
Value
AP9770GT-HF
150
60
TO-92
(S-type)
500mΩ
200908211
-1.5A
-60V
Units
Units
℃/W
℃/W
W
W
V
V
A
A
A
1

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AP9770GT-HF Summary of contents

Page 1

... Symbol Rthj-l Maximum Thermal Resistance, Junction-lead Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9770GT-HF Halogen-Free Product BV -60V DSS R 500mΩ DS(ON) I -1.5A D TO-92 S (S-type Rating Units ...

Page 2

... AP9770GT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 0 -10V G 2.0 1.6 1.2 0.8 0 -50 T Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9770GT-HF -10V o C -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9770GT- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10 Operation in this area limited by R DS(ON = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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