AP6906GH-HF Advanced Power Electronics Corp., AP6906GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6906GH-HF

Manufacturer Part Number
AP6906GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6906GH-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
40
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
8
Qgs (nc)
2
Qgd (nc)
5
Id(a)
16.4
Pd(w)
3
Configuration
Dual N
Package
SDPAK
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SDPAK
independent device that is suitable and optimum for DC/DC
power application.
D
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
@T
C
A
A
Symbol
Symbol
A
=25℃
=25℃
=70℃
=25℃
TM
Advanced Power
Electronics Corp.
used APEC innovated package and provides two
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
G1
S1
-55 to 150
-55 to 150
Rating
BV
R
I
G1
D
16.4
+20
6.2
60
30
DS(ON)
5
3
DSS
S2
AP6906GH-HF
Value
S1
D1
6.0
42
G2
G2
SDPAK
D1 (TAB1)
Preliminary
20090716pre
40mΩ
D2 (TAB2)
16.4A
TM
Units
℃/W
℃/W
60V
Unit
W
V
V
A
A
A
A
D2
S2
1

Related parts for AP6906GH-HF

AP6906GH-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP6906GH-HF Preliminary BV DSS R 40mΩ DS(ON (TAB1) D2 (TAB2 SDPAK ...

Page 2

... AP6906GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... AP6906GH- Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 4

... Single Pulse 100ms 0. 0.001 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform AP6906GH-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T Peak ...

Related keywords