AP6905GH-HF Advanced Power Electronics Corp., AP6905GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6905GH-HF

Manufacturer Part Number
AP6905GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6905GH-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
9.5
Qgs (nc)
2
Qgd (nc)
6
Id(a)
37
Pd(w)
3
Configuration
Dual N
Package
SDPAK
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SDPAK
independent device that is suitable and optimum for DC/DC
power application.
D
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
@T
Simple Drive Requirement
Fast Switching Performance
Two Independent Device
Halogen Free & RoHS Compliant Product
C
A
A
Symbol
Symbol
A
=25
=25
=70
=25
TM
Advanced Power
Electronics Corp.
used APEC innovated package and provides two
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
G1
S1
-55 to 150
-55 to 150
Rating
BV
R
I
G1
D
11.5
+20
9.2
40
37
50
DS(ON)
3
DSS
S2
AP6905GH-HF
Value
S1
D1
4.0
42
G2
G2
SDPAK
D1 (TAB1)
Preliminary
20090504pre
13mΩ
D2 (TAB2)
TM
Units
37A
40V
Unit
W
V
V
A
A
A
A
/W
/W
D2
S2
1

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AP6905GH-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP6905GH-HF Preliminary BV DSS R 13mΩ DS(ON (TAB1) D2 (TAB2 SDPAK ...

Page 2

... AP6905GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... AP6905GH- Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 4

... Single Pulse DC 0.001 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform AP6905GH-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T Peak ...

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