AP9579GI-HF Advanced Power Electronics Corp., AP9579GI-HF Datasheet - Page 3

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9579GI-HF

Manufacturer Part Number
AP9579GI-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9579GI-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
45
Qgs (nc)
7.5
Qgd (nc)
26
Id(a)
26.8
Pd(w)
1.92
Configuration
Single P
Package
TO-220CFM
160
120
80
40
25
23
21
19
17
0
20
16
12
8
4
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
-V
-V
Reverse Diode
-V
o
SD
C
DS
T
GS
4
4
j
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
=150
, Gate-to-Source Voltage (V)
o
0.6
C
8
6
I
T
0.8
D
C
= -15 A
=25
T
o
1
C
j
=25
V
12
8
G
= - 4 .0 V
o
1.2
C
- 7 .0V
- 6 .0V
- 5.0 V
-10V
1.4
16
10
100
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
T
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
C
D
G
=150
= - 20 A
= -10V
2
Junction Temperature
T
-V
T
v.s. Junction Temperature
o
j
C
j
DS
, Junction Temperature (
, Junction Temperature (
0
0
, Drain-to-Source Voltage (V)
4
6
50
50
AP9579GI-HF
8
o
o
100
100
C)
C)
V
G
10
= -4.0V
-7.0V
-6.0V
-5.0V
-10V
12
150
150
3

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