AP9578GP Advanced Power Electronics Corp., AP9578GP Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9578GP

Manufacturer Part Number
AP9578GP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9578GP

Vds
-60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
160
Rds(on) / Max(m?) Vgs@4.5v
200
Qg (nc)
10
Qgs (nc)
2
Qgd (nc)
4
Id(a)
-10
Pd(w)
28
Configuration
Single P
Package
TO-220
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP9578GS/P
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
j
=25
=150
=25
o
C)
o
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-5A
=-5A
G
D
=-5A, V
=-5A, V
=6Ω
=3.3Ω,V
=V
=-10V, I
=-60V, V
=-48V, V
=-48V
=-30V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±25V
=-4.5V
=0V
GS
Test Conditions
Test Conditions
, I
GS
GS
D
D
=-250uA
=0V
=0V,
=-250uA
D
GS
D
D
GS
GS
=-5A
=-5A
=-3A
=-10V
=0V
=0V
D
=-1mA
Min.
Min.
-60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.06
Typ.
Typ.
760
107
10
10
13
34
29
80
60
45
6
2
4
-
-
-
-
-
-
-
-
Max. Units
±100
1220
Max. Units
-1.2
160
200
-10
-25
16
-3
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
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