AP9575GM Advanced Power Electronics Corp., AP9575GM Datasheet

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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9575GM RoHS-compliant Product BV -60V DSS R 90mΩ DS(ON Rating Units -60 ±25 -4.0 -3.2 -20 2.5 0.02 W/℃ ...

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... AP9575GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... Fig 2. Typical Output Characteristics 2 =-10V G 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575GM -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 ...

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... AP9575GM - Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...