AP9575GI Advanced Power Electronics Corp., AP9575GI Datasheet
AP9575GI
Specifications of AP9575GI
Related parts for AP9575GI
AP9575GI Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G D TO-220CFM(I) S Parameter @ 10V GS @ 10V GS 1 Parameter AP9575GI RoHS-compliant Product BV -60V DSS R 70mΩ DS(ON) I -16A Rating Units -60 +20 ...
Page 2
... AP9575GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
Page 3
... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575GI -10V o C -7.0V. -5.0V -4. -3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
Page 4
... AP9575GI Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...