AP9573GH-HF Advanced Power Electronics Corp., AP9573GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP9573GH-HF

Manufacturer Part Number
AP9573GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9573GH-HF

Vds
-60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
95
Rds(on) / Max(m?) Vgs@4.5v
150
Qg (nc)
9
Qgs (nc)
1.5
Qgd (nc)
6
Id(a)
-13.5
Pd(w)
31
Configuration
Single P
Package
TO-252
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance Junction-case
Parameter
Parameter
1
GS
GS
G
@ -10V
@ -10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
-13.5
D
-8.5
+20
-60
-40
31
DS(ON)
DSS
AP9573GH-HF
Value
62.5
G
4
D
S
TO-252(H)
-13.5A
200911102
95mΩ
-60V
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP9573GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ -10V GS @ -10V GS 1 Parameter AP9573GH-HF Halogen-Free Product BV -60V DSS R 95mΩ DS(ON) I -13. TO-252(H) S Rating Units ...

Page 2

... AP9573GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10A -10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1.6 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9573GH-HF -10V o C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9573GH- -48V -10A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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