AP9565AGJ Advanced Power Electronics Corp., AP9565AGJ Datasheet - Page 4

• Manufacturer Part Number: AP9565AGJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9565AGJ

• Vds: -40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 42
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 12
• Qgs (nc): 2.3
• Qgd (nc): 6.9
• Id(a): -18.5
• Pd(w): 25
• Configuration: Single P
• Package: TO-251

AP9565AGH/J
100
0.1
10
14
12
10
40
30
20
10
1
8
6
4
2
0
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
V
T
DS
c
=25
-V
=-5V
V
-V
I
5
DS
Q
D
DS
o
GS
= -16A
C
G
= -32V
T
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
j
=25
1
2
10
o
C
15
T
10
4
j
=150
20
o
C
100ms
100us
10ms
1ms
DC
100
25
6
Fig 10. Effective Transient Thermal Impedance
10000
0.01
1000
0.1
100
0.00001
10
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.02
0.01
0.05
Single Pulse
G
0.2
Duty factor=0.5
0.1
5
0.0001
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
0.01
17
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
0.1
DM
T
x R
thjc
25
+ T
Q
C
C
C
C
rss
oss
iss
1
29
4