AP9563GH-HF Advanced Power Electronics Corp., AP9563GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP9563GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9563GH-HF

• Vds: -40V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 40
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 16
• Qgs (nc): 2.5
• Qgd (nc): 9
• Id(a): -26
• Pd(w): 39
• Configuration: Single P
• Package: TO-252

AP9563GH/J-HF
100
0.1
10
14
12
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
90%
V
V
Single Pulse
GS
T
DS
C
-V
=25
DS
10
Q
o
t
C
d(on)
, Drain-to-Source Voltage (V)
V
G
I
DS
D
1
, Total Gate Charge (nC)
=-12A
=-32V
t
r
20
10
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.01
0.02
0.1
0.05
0.2
Duty factor=0.5
G
Single Pulse
5
0.0001
Q
-V
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
0.1
DM
T
x R
25
thjc
C
+ T
C
Q
C
C
oss
rss
iss
29
1
4