AP9562GP-HF Advanced Power Electronics Corp., AP9562GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9562GP-HF

Manufacturer Part Number
AP9562GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9562GP-HF

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
15
Qgs (nc)
3
Qgd (nc)
9
Id(a)
-27
Pd(w)
39
Configuration
Single P
Package
TO-220
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
-17.5
D
-100
+20
-40
-27
39
DS(ON)
DSS
AP9562GP-HF
Value
3.2
62
TO-220(P)
32mΩ
200904291
-40V
-27A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP9562GP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9562GP-HF Halogen-Free Product BV -40V DSS R 32mΩ DS(ON) I -27A D G TO-220( Rating Units ...

Page 2

... AP9562GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -16A -10V G 1.6 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1 0.9 0.7 0.5 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP9562GP-HF -10V o C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9562GP- -32V -16A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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