AP9477GK-HF Advanced Power Electronics Corp., AP9477GK-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP9477GK-HF

Manufacturer Part Number
AP9477GK-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9477GK-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
90
Rds(on) / Max(m?) Vgs@4.5v
110
Qg (nc)
6.5
Qgs (nc)
1.5
Qgd (nc)
3.5
Id(a)
4.1
Pd(w)
2.8
Configuration
Single N
Package
SOT-223

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9477GK-HF
Manufacturer:
XILINX
Quantity:
120
Part Number:
AP9477GK-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-223
D
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
3
Halogen-Free Product
S
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.02
+20
4.1
3.3
2.8
G
60
20
DS(ON)
DSS
AP9477GK-HF
Value
45
D
S
90mΩ
201007292
4.1A
Units
W/℃
℃/W
60V
Unit
W
V
V
A
A
A
1

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AP9477GK-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D SOT-223 G Parameter Parameter 3 AP9477GK-HF Halogen-Free Product BV 60V DSS R 90mΩ DS(ON 4. Rating Units 60 V ...

Page 2

... AP9477GK-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.8 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance 160.0 135 = 110.0 85.0 60.0 1.2 0 Fig 6. On-Resistance vs. AP9477GK-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature V =4. =10V ...

Page 4

... AP9477GK- = =32V =40V DS V =48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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