AP4569GD Advanced Power Electronics Corp., AP4569GD Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4569GD

Manufacturer Part Number
AP4569GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4569GD

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
90
Rds(on) / Max(m?) Vgs@4.5v
130
Qg (nc)
7
Qgs (nc)
1.6
Qgd (nc)
4
Id(a)
-3.8
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Fast Switching Speed
▼ ▼ ▼ ▼ PDIP-8 Package
▼ ▼ ▼ ▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
D1
PDIP-8
D1
Parameter
D2
1
D2
S1
3
3
G1
S2
G2
3
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
40
4.8
3.9
20
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
0.016
2
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
-3.8
±20
-40
-20
-3
G2
AP4569GD
200711051-1/7
52mΩ
90mΩ
-3.8A
-40V
4.8A
Units
W/℃
℃/W
40V
Unit
W
V
V
A
A
A
D2
S2

Related parts for AP4569GD

AP4569GD Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice PDIP Parameter 3 AP4569GD Pb Free Plating Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BV DSS R DS(ON P-CH BV DSS R DS(ON Rating ...

Page 2

... AP4569GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =- =-30V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.5A =-3A dI/dt=-100A/µs AP4569GD Min. Typ. Max. Units -40 - =-1mA - -0. =-250uA - = = 1 =-10V ...

Page 4

... AP4569GD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 145 115 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 1ms 10ms 0.1 100ms 1s 10s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. =150 Fig 12. Gate Charge Waveform AP4569GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

Page 6

... AP4569GD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 220 180 140 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 1ms 10ms 0.1 100ms 1s 10s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. =150 Fig 12. Gate Charge Waveform AP4569GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...

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