AP4565GM Advanced Power Electronics Corp., AP4565GM Datasheet - Page 5

• Manufacturer Part Number: AP4565GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4565GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 17
• Qgs (nc): 4
• Qgd (nc): 10
• Id(a): 7.6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
Single Pulse
DS
GS
V
T
I
DS
A
D
=25
V
=7A
=32V
Q
DS
10
G
t
o
d(on)
, Drain-to-Source Voltage (V)
C
, Total Gate Charge (nC)
1
t
r
20
10
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
100
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.001
G
Duty factor=0.5
5
0.01
0.02
0.05
0.1
0.2
Single Pulse
Q
V
GS
t , Pulse Width (s)
0.01
DS
9
, Drain-to-Source Voltage (V)
Q
Q
13
0.1
G
GD
Charge
17
1
AP4565GM
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
t
= P
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
Q
+ T
iss
rss
oss
a
1000
29