AP1333GU Advanced Power Electronics Corp., AP1333GU Datasheet

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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-323 G Parameter Parameter 3 AP1333GU RoHS-compliant Product BV -20V DSS R 800mΩ DS(ON) I -550mA Rating Unit -20 +12 -550 -440 -2 ...

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... AP1333GU Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 4. 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 2 1.0 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP1333GU -5. -4.5V -3.5V -2. 2.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 2 ...

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... AP1333GU -0. -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10 Operation in this area limited DS(ON Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...