AP6920GMT-HF Advanced Power Electronics Corp., AP6920GMT-HF Datasheet

AP6920GMT-HF

Manufacturer Part Number
AP6920GMT-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6920GMT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Rds(on) / Max(m?) Vgs@4.5v
10.5
Qg (nc)
35
Qgs (nc)
12.5
Qgd (nc)
19
Id(a)
80
Pd(w)
3.9
Configuration
Dual N
Package
PMPAK 5X6
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
D
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
@T
Converter Application
C
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip Limited)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
3
3
G1
G2
G1 D1 D1 D1
G2 S2 S2 S2
3
4
D2/S1
D1
S2
S1/D2
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
CH-1
CH-1
14.7
11.8
3.13
CH-1
CH-2
+20
46
40
40
70
30
4
Halogen-Free Product
-55 to 150
-55 to 150
Rating
Rating
G1
BV
R
I
BV
R
I
D
D
AP6920GMT-HF
DS(ON)
DS(ON)
D1
DSS
DSS
D1
19.2
CH-2
CH-2
+20
D1
3.9
2.8
80
24
60
32
60
30
PMPAK
G2
4.5mΩ
201103222
9mΩ
S2
Units
Units
℃/W
℃/W
℃/W
46A
30V
80A
30V
®
W
S2
V
V
A
A
A
A
5x6
S2
1

Related parts for AP6920GMT-HF

AP6920GMT-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 G1 D2/ S1/ Parameter 3 4 AP6920GMT-HF Halogen-Free Product CH-1 BV DSS R 9mΩ DS(ON) I 46A D CH-2 BV 30V DSS R 4.5mΩ DS(ON) I 80A D ...

Page 2

... AP6920GMT-HF CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =15V DS V =4. =15V =3.3Ω =10V =15V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =20A =10A dI/dt=100A/µs AP6920GMT-HF Min. Typ =20A - - =12A - - D =250uA 1 - =20A - 3300 5280 ...

Page 4

... Fig 2. Typical Output Characteristics 2.0 = 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 2.0 1 0.8 0.4 0.0 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6920GMT- =150 Drain-to-Source Voltage ( =12A D V =10V 100 Junction Temperature ( C) j v.s. Junction Temperature I =250uA ...

Page 5

... AP6920GMT-HF Channel =12A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

Page 6

... Fig 2. Typical Output Characteristics 2.0 =12A o = 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 2.0 1 0.8 0.4 0.0 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6920GMT- =150 Drain-to-Source Voltage ( =20A D V =10V 100 Junction Temperature ( C) j v.s. Junction Temperature I =250uA ...

Page 7

... AP6920GMT-HF Channel =20A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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