AP6950GYT-HF Advanced Power Electronics Corp., AP6950GYT-HF Datasheet - Page 7

• Manufacturer Part Number: AP6950GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6950GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 6
• Qgs (nc): 2.5
• Qgd (nc): 3
• Id(a): 21
• Pd(w): 1.9
• Configuration: Duan N-Channel
• Package: PMPAK 3x3

Channel-2
AP6950GYT-HF
0.01
100
0.1
10
10
60
50
40
30
20
10
1
8
6
4
2
0
0
0.01
0
0
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Operation in this area
limited by R
V
I
V
Single Pulse
DS
D
T
DS
=11A
A
=5V
=15V
=25
DS(ON)
1
V
Q
DS
o
0.1
T
V
4
C
G
j
GS
,Drain-to-Source Voltage (V)
=150
, Total Gate Charge (nC)
2
, Gate-to-Source Voltage (V)
T
o
C
j
=25
T
8
1
3
j
o
=-40
C
o
C
4
12
10
5
100ms
100us
10ms
1ms
DC
1s
16
100
6
Fig 10. Effective Transient Thermal Impedance
1200
1000
0.001
800
600
400
200
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
Single Pulse
V
Duty factor = 0.5
0.05
0.01
0.1
0.2
G
0.001
5
Q
V
GS
DS
0.01
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
=105
j
= PDM x R
t
o
C/W
T
f=1.0MHz
100
25
thja
Q
C
C
C
+ T
iss
oss
rss
a
1000
29
7