AP9412AGM Advanced Power Electronics Corp., AP9412AGM Datasheet - Page 4

• Manufacturer Part Number: AP9412AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9412AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 8
• Qg (nc): 18
• Qgs (nc): 3.7
• Qgd (nc): 8
• Id(a): 16
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP9412AGM
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
10%
90%
T
V
V
A
GS
=25
DS
10
o
I
V
C
D
V
Q
DS
0.1
= 12 A
t
V
DS
G
d(on)
V
, Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 15 V
DS
=18V
=24V
t
20
r
1
30
t
d(off)
10
40
t
f
100ms
100us
10ms
1ms
DC
1s
100
50
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
Duty factor=0.5
V
0.02
0.01
0.05
0.2
0.1
Single Pulse
G
0.001
5
Q
V
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
10
21
thia
=125 ℃/W
j
= P
t
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
Q
+ T
oss
iss
rss
a
1000
29
4