AP9410GMT-HF Advanced Power Electronics Corp., AP9410GMT-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9410GMT-HF

Manufacturer Part Number
AP9410GMT-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9410GMT-HF

Vds
30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
5
Rds(on) / Max(m?) Vgs@4.5v
5.5
Qg (nc)
28
Qgs (nc)
3
Qgd (nc)
12
Id(a)
80
Pd(w)
56.8
Configuration
Single N
Package
PMPAK 5x6
▼ Capable of 2.5V Gate Drive
▼ Simple Drive Requirement
▼ SO-8 Compatible
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
and the foot print is compatible with SO-8 with backside heat sink.
D
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
@T
C
A
A
Symbol
Symbol
C
A
=25℃
=70℃
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
®
5x6 package is special for DC-DC converters application
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
, V
GS
4
@ 4.5V
G
GS
@ 4.5V
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
S
Rating
BV
R
I
D
S
23.6
56.8
28.8
+12
300
AP9410GMT-HF
30
80
19
DS(ON)
S
5
DSS
G
Value
2.2
25
PMPAK
D
D
5.5mΩ
®
201003031
D
Units
Units
℃/W
℃/W
30V
80A
5x6
W
W
mJ
D
V
V
A
A
A
A
1

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AP9410GMT-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 4. 4. Parameter 3 AP9410GMT-HF Halogen-Free Product BV 30V DSS R 5.5mΩ DS(ON) I 80A □ ® PMPAK ...

Page 2

... AP9410GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =20A D V =4.5V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.2 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP9410GMT-HF 5. =150 C C 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP9410GMT- =20A D V =15V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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