AP9408GH Advanced Power Electronics Corp., AP9408GH Datasheet

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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9408GH/J RoHS-compliant Product BV 30V DSS R 10mΩ DS(ON) I 57A □ ...

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... AP9408GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... I =30A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 0.0 1.2 - Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9408GH =175 C 10V C 7 .0V 5.0V 4 =3.0V G 2.0 4.0 6.0 8.0 , Drain-to-Source Voltage ( 100 150 200 o , Junction Temperature ( 100 150 200 o , Junction Temperature ( ...

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... AP9408GH =10A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 V =5V DS 100 o T =25 ...