AP9930GM-HF Advanced Power Electronics Corp., AP9930GM-HF Datasheet - Page 6

• Manufacturer Part Number: AP9930GM-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9930GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 33
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 5.5
• Pd(w): 1.38
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP9930GM-HF
10.00
1.00
0.10
0.01
25
20
15
10
95
75
55
35
5
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0.1
2
0
Fig 5. Forward Characteristic of
T
T
j
A
=150
=25
-V
0.3
1
-V
Reverse Diode
o
SD
o
-V
C
C
DS
4
,Source-to-Drain Voltage (V)
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.5
2
0.7
3
6
T
I
A
D
=25
=-2A
T
j
0.9
=25
4
℃
o
8
V
C
G
1.1
=-3.0V
5
-10V
-8.0V
-6.0V
-4.0V
1.3
10
6
20
15
10
1.8
1.6
1.4
1.2
0.8
0.6
1.8
1.6
1.4
1.2
5
0
1
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
G
D
A
= -10 V
=150
= -4 A
T
-V
1
v.s. Junction Temperature
Junction Temperature
j
T
o
DS
, Junction Temperature (
C
j
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
4
o
C)
100
100
o
C)
V
G
5
=-3.0V
-10V
-8.0V
-6.0V
-4.0V
150
150
6
6