AP9930AGM Advanced Power Electronics Corp., AP9930AGM Datasheet - Page 6

• Manufacturer Part Number: AP9930AGM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9930AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 35
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6.3
• Qgs (nc): 1.5
• Qgd (nc): 3.5
• Id(a): 5.2
• Pd(w): 1.38
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP9930AGM
20
16
12
90
80
70
60
50
8
6
4
2
0
8
4
0
0.1
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0
Fig 5. Forward Characteristic of
T
A
=25
0.3
o
-V
Reverse Diode
C
-V
-V
DS
1
4
SD
GS
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.5
T
j
=150
0.7
2
6
o
C
I
T
D
A
=-2A
=25
0.9
℃
T
3
8
V
j
=25
G
1.1
=-4.0V
-7.0V
-6.0V
-5.0V
o
-10V
C
1.3
10
4
20
15
10
1.8
1.6
1.4
1.2
0.8
0.6
1.4
1.2
0.8
0.6
0.4
5
0
1
1
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
G
D
A
= -10 V
=150
= -3 A
T
1
v.s. Junction Temperature
Junction Temperature
-V
j
T
o
, Junction Temperature (
C
j
DS
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
4
o
C)
100
100
o
C)
V
G
5
=-4.0V
-7.0V
-6.0V
-5.0V
-10V
150
150
6
6