AP7811GM Advanced Power Electronics Corp., AP7811GM Datasheet - Page 3

• Manufacturer Part Number: AP7811GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP7811GM

• Vds: 25V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 12
• Qg (nc): 32
• Qgs (nc): 2.6
• Qgd (nc): 15.5
• Id(a): 11.8
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

18
16
14
12
10
40
30
20
10
8
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
T
C
=25
0.5
o
C
V
DS
3
, Drain-to-Source Voltage (V)
1
V
GS
1.5
4
(V)
2
5
I
T
V
D
C
2.5
=11.8A
GS
=25
4.5V
3.5V
3.0V
2.5V
=2.0V
o
C
6
3
30
20
10
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
0
-50
T
C
V
=150
I
D
GS
=11.8A
0.5
v.s. Junction Temperature
=4.5V
o
V
C
DS
T
j
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
1
1.5
50
AP7811GM
2
100
o
C)
V
GS
4.5V
3.5V
3.0V
2.5V
2.5
=2.0V
150
3