AP70T03GP Advanced Power Electronics Corp., AP70T03GP Datasheet - Page 4

• Manufacturer Part Number: AP70T03GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GP

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 16.5
• Qgs (nc): 5
• Qgd (nc): 10.3
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-220

AP70T03GS/P
1000
100
10
12
1
9
6
3
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
Fig 11. Switching Time Waveform
10%
Single Pulse
V
T
V
C
GS
DS
I
=25
D
5
=33A
Q
o
V
C
G
t
DS
d(on)
V
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
V
DS
10
1
V
DS
=16V
t
DS
=20V
r
=24V
15
10
20
t
d(off)
t
25
f
10us
100us
1ms
10ms
100ms
DC
100
30
Fig10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Duty factor = 0.5
V
0.01
0.02
Single Pulse
0.05
0.2
0.1
G
0.0001
Q
V
8
DS
GS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
Charge
G
GD
15
0.01
P
DM
Duty Factor = t/T
Peak T
22
j
= P
t
f=1.0MHz
0.1
DM
T
x R
thjc
C
C
C
+ T
Q
iss
oss
rss
C
29
1
4