AP70T03GH Advanced Power Electronics Corp., AP70T03GH Datasheet - Page 3

• Manufacturer Part Number: AP70T03GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GH

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 17
• Qgs (nc): 5
• Qgd (nc): 10
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-252

1000
100
200
150
100
0.1
50
10
60
40
20
0
1
0
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
T
=25
j
V
=175
V
Reverse Diode
SD
V
o
DS
C
GS
4
o
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
, Gate-to-Source Voltage (V)
1.5
0.5
8
T
I
D
C
=25
=20A
3.0
1
℃
T
12
j
=25
V
G
o
6.0V
=4.0V
8.0V
C
10V
4.5
1.5
16
120
90
60
30
1.6
1.2
0.8
0.4
2.5
1.5
0.5
0
2
2
1
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
D
G
=175
=33A
=10V
v.s. Junction Temperature
Junction Temperature
o
V
T
T
C
DS
j
j
, Junction Temperature (
, Junction Temperature (
1.5
, Drain-to-Source Voltage (V)
25
25
AP70T03GH/J
3.0
100
100
V
o
o
C)
C )
G
8.0V
6.0V
=4.0V
10V
175
4.5
175
3