AP60U02GH Advanced Power Electronics Corp., AP60U02GH Datasheet - Page 4

• Manufacturer Part Number: AP60U02GH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60U02GH

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 20
• Qg (nc): 15
• Qgs (nc): 3.5
• Qgd (nc): 9.5
• Id(a): 40
• Pd(w): 25
• Configuration: Single N
• Package: TO-252

AP60U02GH
1000
100
10
12
1
0
9
6
3
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
Fig7. Gate Charge Characteristics
V
V
I
GS
D
DS
= 30 A
V
T
Single Pulse
DS
c
V
=25
= 12 V
Q
DS
V
t
G
d(on)
DS
o
, Drain-to-Source Voltage (V)
C
, Total Gate Charge (nC)
= 15 V
V
10
1
DS
t
r
= 20 V
10
20
t
d(off)
t
f
100us
1ms
10ms
100ms
DC
100
30
Fig 8. Typical Capacitance Characteristics
Fig10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
1
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
0.05
Duty factor=0.5
G
Single Pulse
5
0.1
0.2
0.0001
V
Q
DS
t , Pulse Width (s)
GS
9
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
0.1
T
x R
25
thjc
C
+ T
Q
C
C
C
rss
oss
iss
29
1
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