AP60T03GS Advanced Power Electronics Corp., AP60T03GS Datasheet - Page 4

• Manufacturer Part Number: AP60T03GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Qg (nc): 11.6
• Qgs (nc): 3.9
• Qgd (nc): 7
• Id(a): 45
• Pd(w): 44
• Configuration: Single N
• Package: TO-263

AP60T03GS/P
1000
100
10
12
1
9
6
3
0
0.1
Fig 9. Maximum Safe Operating Area
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
10%
T
Single Pulse
90%
V
I
V
C
D
GS
=25
DS
=20A
o
V
C
Q
DS
6
t
G
d(on)
V
, Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
V
1
DS
=16V
DS
t
=20V
r
=24V
12
10
t
d(off)
18
t
100us
f
10ms
100ms
DC
1ms
100
24
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Single Pulse
0.01
0.05
0.02
G
0.2
0.1
Duty factor = 0.5
0.0001
Q
V
8
GS
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
15
Charge
G
GD
0.01
P
DM
Duty Factor = t/T
Peak T
22
j
= P
t
0.1
DM
f=1.0MHz
T
x R
C
C
C
thjc
iss
oss
rss
+ T
Q
C
29
1
4