AP60T03AS Advanced Power Electronics Corp., AP60T03AS Datasheet - Page 3

• Manufacturer Part Number: AP60T03AS
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60T03AS

• Vds: 30v
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Qg (nc): 11.6
• Qgs (nc): 3.9
• Qgd (nc): 7
• Id(a): 45
• Pd(w): 44
• Configuration: Single N
• Package: TO-263

100
125
100
0.1
10
75
50
25
80
60
40
20
1
0
0
0.0
0
3
Fig 3. On-Resistance v.s. Gate Voltage
Fig 1. Typical Output Characteristics
T
Fig 5. Forward Characteristic of
C
=25
Tj=175
V
V
SD
V
DS
o
GS
C
(V) , Source-to-Drain Voltage (V)
1.0
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
o
C
0.5
Reverse Diode
2.0
7
1
Tj=25
3.0
9
V
T
GS
I
o
8.0V
6.0V
5.0V
10V
C
C
D
=4.0V
=25 ℃ ℃ ℃ ℃
=20A
4.0
11
1.5
2.8
2.3
1.8
1.3
0.8
0.3
90
60
30
1.6
1.2
0.8
0.4
0
2
0.0
-50
-50
Fig 2. Typical Output Characteristics
T
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
C
V
I
=175
D
GS
=20A
T
=10V
V
T
1.0
v.s. Junction Temperature
Junction Temperature
o
j
j
DS
C
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
25
25
2.0
AP60T03AS/P
3.0
100
100
o
o
C )
C)
V
4.0
GS
8.0V
5.0V
10V
6.0V
=4.0V
5.0
175
175